
Renesas Electronics has introduced a new line of plastic-encapsulated radiation-resistant (rad-hard) devices for satellite power management systems. The four new devices include ISL71001SLHM/SEHM Point of Load (POL) step-down regulators, ISL71610SLHM and ISL71710SLHM digital isolators, and ISL73033SLHM100V GaN FETs and integrated low-side drivers. The new portfolio combines radiation assurance levels with board area savings and cost advantages in plastic packaging for medium/geosynchronous Earth orbit (MEO/GEO) and small satellites (smallsats) and higher density electronics with longer life requirements, while reducing size, weight and power consumption (SWaP) costs.
The new IC also complements the radiation-resistant plastic encapsulated IC that Renesas introduced in 2017 for small satellites in low Earth orbit. Together, Renesas' plastic IC family supports multiple orbital ranges, providing the radiation performance and optimal cost balance required for a variety of satellite subsystems and payloads.
"With each new mission, customers demand more functionality, which requires larger satellite payloads and has traditionally translated into an increase in SWaP for satellite systems," said Philip Chesley, vice president of Renesas Electronics Industry and Communications Business unit. "With Renesas Electronics' new IC, customers can enjoy the SWaP benefits of a plastic package that saves up to 50 percent of the board area compared to ceramic packaged devices, while maintaining the reliability and radiation guarantees required for higher orbital missions with a lifetime of up to and beyond 15 years."
Traditionally, radiation-resistant ics have been produced almost entirely in sealed ceramic packages, which achieve the desired reliability, but there are significant trade-offs in terms of size and weight. The new Renesas Electronics radiation-resistant plastic IC helps customers reduce the footprint and cost of their electronics without compromising performance.
To ensure that plastic ics maintain the highest quality in the harsh space environment, the new devices have production level testing similar to QMLV, and all devices will undergo radiation Lot acceptance testing (RLAT).
The production test process includes 100% CSAM, X-ray, temperature cycling, static and dynamic aging, and visual inspection, and complies with the SAE AS6294/1 space plastic encapsulated microelectronics standard. Additional screening includes batch assurance testing for each component and wafer batch product for HAST, lifetime testing, and humidity sensitivity.
Radiation-resistant ics were characterized at low dose rates (LDR) with total ionization dose (TID) up to 75krad(Si) and linear energy transfer (LET) of 60MeV•cm 2 /mg or LET 86MeV• cm 2 /mg for single event effects (SEE). The ISL71001SEHM has an TID rating of up to 100krad(Si) for high dose rates (HDR).
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