ROHM establishes mass production system for 150V GaN HEMT with gate withstand voltage up to 8V

     ROHM, a world-renowned semiconductor manufacturer, has established a mass production system for 150V withstand voltage GaN HEMT*1 "GNE10xxTB series (GNE1040TB)". The gate withstand voltage (gate-source rated voltage)*2 of this series of products is up to 8V, It is very suitable for power supply circuits of industrial equipment such as base stations and data centers and various Internet of Things communication equipment.

     In general, GaN devices have excellent low on-resistance and high-speed switching performance, and are therefore expected to contribute to reducing power consumption of various power supplies and miniaturizing peripheral components. However, the gate withstand voltage is very low, and there is a problem in the reliability of the device during switching operation. In response to this problem, ROHM's new product has successfully increased the rated voltage between the gate and the source from the conventional 6V to 8V by adopting its own structure. In this way, even if an overshoot voltage of more than 6V*3 occurs during the switching operation, the device will not be degraded, thereby helping to improve the design margin and reliability of the power supply circuit. In addition, this series is available in a general-purpose package that supports high current and has excellent heat dissipation, which makes the mounting process easier.

     ROHM has named its lineup of GaN devices that contribute to energy saving and miniaturization "EcoGaN™" and has been working to further improve device performance. Going forward, ROHM will continue to develop control ICs and modules incorporating analog power technology such as "Nano Pulse Control™"*4, and contribute to the realization of a sustainable society by providing power solutions that maximize the performance of GaN devices strength.

     Prof. Shinyoshi Yamamoto, Graduate School of Engineering, Nagoya University, said: "This year, the Ministry of Economy, Trade and Industry of Japan set a target of 30% energy saving in newly built data centers by 2030, and it is less than 10 years away from achieving this goal. However, these The performance of the product is not only about energy saving, but also about the robustness and stability as a social infrastructure. In response to this social demand in the future, ROHM has developed a new GaN device that is not only more energy efficient, but also has a gate withstand voltage of up to 8V , which can ensure rugged type and stability. Starting with this series, ROHM is continuously improving the efficiency of various power supplies by incorporating its proud analog power supply technology 'Nano Pulse Control™', and in the near future, it should be Unleashing a huge technological wave to advance the goal of '2040 carbon neutrality in the semiconductor and infocomm industries'."