ROHM develops "RGWxx65C series" IGBT (Hybrid IGBT) with built-in SiC diode

     The world-renowned semiconductor manufacturer ROHM has developed 650V withstand voltage IGBT (Hybrid IGBT) with built-in SiC Schottky barrier diode "RGWxx65C series" (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR), and all meet the automotive electronic product reliability standard "AEC- Q101*1”. This product is suitable for on-board chargers and DC/DC converters in electric vehicles (xEVs) including electrified vehicles, as well as power conditioners for solar power generation and other automotive electronic equipment and industrial equipment that handle high power.

     In recent years, electric vehicles (xEVs) have been gaining popularity in global efforts to reduce environmental loads such as "creating a carbon-free society" and "carbon neutrality." In order to further improve the efficiency of the system, there are also diversified demands for power semiconductors used in inverter and converter circuits of various in-vehicle devices, ultra-low loss SiC power components (SiC MOSFET, SiC SBD, etc.) and traditional Most of the silicon power components (IGBT, SJ-MOSFET, etc.) are undergoing technological changes.

     ROHM is committed to providing effective power solutions for a wide range of applications, not only focusing on the industry's advanced SiC power components, but also actively promoting the technology and product development of Si power components and driver ICs. This time, we have developed Hybrid IGBTs that are more cost-effective for popular automotive and industrial equipment.

     The "RGWxx65C series" is a Hybrid type IGBT that uses ROHM's low-loss SiC Schottky barrier diode (SiC SBD) in the feedback unit (freewheeling diode) of the IGBT*2, which has successfully reduced the turn-on time of conventional IGBT products significantly. Switching loss (hereinafter referred to as "turn-on loss"*3). When this product is used in on-board chargers, the loss can be reduced by 67% compared with conventional IGBT products, and the loss can be reduced by 24% compared with the super junction MOSFET (SJ-MOSFET), contributing to further higher cost performance. Reduce power consumption in automotive and industrial equipment applications.