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PI's latest AEC-Q100 qualified Qspeed diodes have the lowest reverse recovery charge (Qrr) of any 600V silicon diode. The QH12TZ600Q diode expands our lineup of automotive-grade diodes, offering the same low switching loss performance as silicon carbide (SiC) devices at no cost.
Automotive on-board charger applications require higher switching frequencies to reduce size and weight. Our QH12TZ600Q diode has a Qrr of only 14nC at 25°C (half the Qrr of other comparable silicon diodes). The diode improves the efficiency of the on-board charger power factor correction (PFC) stage while significantly reducing the temperature rise of the PFC MOSFET.
Like our other Qspeed diodes, the QH12TZ600Q uses hybrid PiN-Schottky diode technology for high performance. Its smooth reverse recovery current transfer characteristics not only improve efficiency, but also reduce EMI and peak reverse voltage stress, eliminating the need for snubber circuits when used as output rectifiers.
The QH12TZ600Q is housed in a compact 2.5kV isolated TO-220 package that can be directly mounted on a metal heat sink for excellent temperature rise performance. They can be used as single or interleaved continuous conduction mode (CCM) PFC boost diodes or output rectifier diodes for on-board chargers.
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