PI launches InnoSwitch3-EP IC with 1700V withstand voltage with integrated silicon carbide switch

     The versatile InnoSwitch3-EP switch IC product family welcomes a new batch of new members, these devices use silicon carbide (SiC) primary switching MOSFETs and integrated controllers. Suitable for industrial applications, these 1700V rated devices can replace discrete controller plus MOSFET designs, saving space, time and cost while improving reliability in applications such as new energy, industrial motor drives, battery energy storage and electricity meters .

     Silicon carbide (SiC)-based InnoSwitch3-EP ICs deliver up to 70W of output power while reducing the number of components required to implement a power supply by up to 50%. The new device also integrates synchronous rectification and quasi-resonant (QR)/CCM flyback controller, which can achieve more than 90% efficiency and make no-load power consumption less than 15mW.

     Available in ultra-thin InSOP-24D packages, the InnoSwitch3-EP product family is now available in cost-effective silicon, high-efficiency gallium nitride (GaN), and high-voltage SiC transistors to help design engineers optimize their power in a wide range of applications solution.

     The InnoSwitch3-EP IC uses a FluxLink feedback link that provides up to 5000VRMS of reinforced isolation for secondary side control. FluxLink technology directly detects the output voltage and has the advantage of providing high-precision control and extremely fast dynamic response characteristics. Additional protection features include input undervoltage protection, output overvoltage protection, and overcurrent limiting.