PI introduces automotive grade Qspeed silicon diodes for efficient high-speed designs

     Power Integrations, a well-known company in the field of energy-efficient power conversion for high voltage integrated circuits, announced the introduction of the 600V 12A Qspeed diode, which has the industry's lowest reverse recovery charge (Qrr) characteristic among silicon diodes. With a Qrr of only 14nC at 25°C, the diode improves the efficiency of the PFC stage of the car charger, which can significantly reduce the temperature rise of the PFC MOSFETs. The AEC-Q101 certified QH12TZ600Q has the same low switching loss performance as silicon carbide (SiC) devices, but does not have the disadvantage of cost increases due to the use of expensive technology.

     Edward Ong, Senior Product Marketing Manager at Power Integrations, said: "The Qrr of these new Qspeed diodes is half that of sub-optimal ultra-fast silicon diodes, enabling very high system efficiency. This is particularly important for automotive on-board charger applications that require higher switching frequencies to reduce size and weight, and enables Qspeed diodes to replace SiC devices."

     The QH12TZ600Q uses hybrid PiN-Schottky diode technology to achieve high performance. Its smooth reverse recovery current conversion characteristics not only improve efficiency, but also reduce EMI and peak reverse voltage stress, eliminating the need for buffer circuits when used as an output rectifier in an on-board charger. The new device comes in a compact 2.5kV isolated TO-220 package that can be mounted directly onto the metal fins for excellent temperature rise performance.