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Optimal solution and perfect application companion for Silicon Carbide MOSFET safety control

Mar 10 2024 2024-03 Connectors STMicroelectronics
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St's power MOSFETs and IGBT gate drivers are designed to provide the perfect combination of robustness, reliability, system integration and flexibility. These drivers feature integrated high-voltage half-bridges, single and multiple low-voltage gate drivers, making them ideal for a variety of applications.

     St's power MOSFETs and IGBT gate drivers are designed to provide the perfect combination of robustness, reliability, system integration and flexibility. These drivers feature integrated high-voltage half-bridges, single and multiple low-voltage gate drivers, making them ideal for a variety of applications. When it comes to ensuring safety control, the STGAP family of isolated gate drivers is the solution of choice, providing electrical isolation between the input part and the driven MOSFETs or IGBTs, ensuring seamless integration and superior performance.

 

     Choosing the right gate driver is important to achieve the best power conversion efficiency. With the widespread adoption of SiC technology, the need for reliable and safe control solutions is higher than ever, and ST's STGAP series of electrically isolated gate drivers is an essential part of this. The STGAP2SICS series is specifically optimized for security control of SiC MOSFETs and can operate at high voltages up to 1200V, making it an excellent choice for energy efficient power systems, drives and controls. From industrial EV charging systems to solar, induction heating and automotive OBC DC-DC, the STGAP2SICS series simplifies design, saves space and increases robustness and reliability.

 

     The STGAP2SICSA is an automotive AEC-Q100 compliant single-channel gate driver with optimized control of SiC MOSFETs in a space-saving narrow-body SO-8 package (related model: STGAP2SICSAN) and wide-body SO-8W package (related model: STGAP2SICSA provides powerful performance with precise PWM control.

 

     The STGAP2SICSA has electrical isolation between the gate drive channel and the low voltage control and can operate at voltages up to 1700V (SO-8) and 1200V (SO-8W). Its input-to-output propagation time of less than 45ns ensures high PWM accuracy and reliable switching with ±100V/ns common mode transient immunity (CMTI). Built-in protection includes undervoltage lock (UVLO), which prevents SiC power switches from operating under inefficient or unsafe conditions, and thermal shutdown, which turns both driver outputs down if the junction temperature is detected to be too high.

 

     The STGAP2SICSA has a single output configuration with Miller clamping function. Single output enhances stability for high frequency hard switching applications with Miller clamp to prevent power switch oscillations. STGAP2SICSA logic inputs are as low as 3.3V and compatible with TTL and CMOS logic, simplifying connection to the host microcontroller or DSP. The driver can push and pull currents up to 4A at gate drive voltages up to 26V. A shutdown mode with independent input pins helps minimize system power consumption.

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