On Semiconductor announces a new complete silicon carbide MOSFET module solution for electric vehicle charging

     ON Semiconductor has released a pair of 1200 V complete Silicon carbide (SiC) MOSFET 2-PACK modules, further enhancing its product portfolio for the challenging electric vehicle (EV) market.

     As electric vehicle sales continue to grow, infrastructure must be rolled out to meet drivers' needs to provide a network of fast charging stations that enable them to complete their journeys quickly without "range anxiety." The requirements in this area are evolving rapidly, requiring power levels in excess of 350 kW and 95% energy efficiency to become "routine". Given that these charging piles are deployed in different environments and locations, compactness, robustness, and enhanced reliability are all challenges for designers.

     The new 1200V M1 complete SiC MOSFET 2 pack module, based on flat technology, is suitable for drive voltages in the 18 V to 20 V range and is easy to drive with negative gate voltages. Its larger bare chip reduces thermal resistance compared to a channeled MOSFET, resulting in a lower bare chip temperature at the same operating temperature.

     The NXH010P120MNF is configured in a 2-PACK half-bridge architecture and is a 10 mohm device in an F1 package, while the NXH006P120MNF2 is a 6 mohm device in an F2 package. These packages feature crimped pins, ideal for industrial applications, and an embedded negative temperature coefficient (NTC) thermistor helps with temperature monitoring.

     The new SiC MOSFET module is part of ON Semiconductor's EV charging ecosystem and is designed to be used with driver solutions such as NCD5700x devices. The recently introduced NCD57252 dual-channel isolated IGBT/MOSFET gate driver offers 5 kV electrical isolation and can be configured for dual-down bridge, dual-up bridge or half-bridge operation.

     The NCD57252 comes in a small SOIC-16 widebody package and accepts logic level inputs (3.3V, 5V and 15V). The high-current device (source current 4.0A/perfusion current 6.0A at Miller platform voltage) is suitable for high-speed operation, as the typical propagation delay is 60 ns.

     On Semiconductor's SiC MOSFETs complement new modules and gate drivers to provide superior switching performance and enhanced heat dissipation than similar silicon devices, resulting in higher energy efficiency and power density, improved electromagnetic interference (EMI), and reduced system size and weight.

     The recently released 650 V SiC MOSFETs feature a novel active cell design combined with advanced thin wafer technology to achieve best-in-class factor of quality (FoM) for (RDS(on)*area). This family of devices such as NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC are the lowest RDS(on) MOSFETs in the D2PAK7L/TO247 package on the market.