ON releases SUPERFET V MOSFET series with high performance and low loss, which is applied to servers and telecommunications

     Onsemi, a leader in smart power and intellisense technologies, unveils its new 600 V SUPERFET V MOSFET family. These high performance devices enable power supplies to meet stringent energy efficiency requirements, such as the 80 PLUS Titanium, especially in challenging 10% load conditions. The three product groups under the 600 V SuperFETs --FAST, Easy Drive, and FRFETs -- are optimized to deliver leader-in-class performance across a variety of different applications and topologies.

     The 600 V SUPERFET V series offers excellent switching characteristics and low gate noise, resulting in reduced electromagnetic interference (EMI), which is a significant benefit for servers and telecommunications systems. In addition, strong body diodes and high VGSS (DC ±30 V) enhance system reliability.

     "With the goal of addressing climate change, the 80 Plus Titanium certification requires server and data storage hardware to achieve power efficiency levels of 90 percent at 10 percent load and 96 percent at 50 percent load," said Asif Jakwani, senior vice president and general manager of Anson's Advanced Power division. The FAST, Easy Drive and FRFET versions of our SUPERFET V family are meeting these requirements, providing a robust solution that ensures continued system reliability."

     The FAST version delivers extremely high energy efficiency in hard switching topologies such as high-end PFC and is optimized to provide lower gate charge (Qg) and EOSS losses for fast switching. Initial devices for this release include the NTNL041N60S5H (41 mΩ RDS(on)) and NTHL185N60S5H (185 mΩ RDS(on)), both in TO-247 packages. The NTP185N60S5H uses TO-220 package, and the NTMT185N60S5H uses 8.0mm x 8.0mm x 1.0mm Power88 package TO ensure humidity sensitivity level MSL 1, and has Kelvin source architecture to improve gate noise and switching loss.

     The Easy Drive version is suitable for both hard and soft switch topologies and includes a built-in gate resistor (Rg) and optimized built-in capacitance. They are suitable for general purpose in many applications, including PFC and LLC. In these devices, the RDS(on) of the built-in Zener diode between the gate and source exceeds 120 mΩ, resulting in less stress on the gate oxide and higher ESD durability, thus increasing package yield and reducing the defect rate. The two devices currently available, NTHL099N60S5 and NTHL120N60S5Z, have RDS(on) of 99 mΩ and 120 mΩ in TO-247 packages.

     The Quick Recovery (FRFET) version is suitable for soft switching topologies such as Phase Shifted Full Bridge (PSFB) and LLC. They have the advantage of fast body diodes and provide reduced Qrr and Trr. Strong diode durability ensures higher system reliability. The RDS(on) of NTP125N60S5FZ with built-in Zener diode is 125 mΩ in TO-220 package, while the RDS(on) of NTMT061N60S5F is 61 mΩ in Power88 package. The lowest loss device is NTHL019N60S5F, RDS(on) only 19 mΩ, using TO-247 package.