ON Semiconductor Releases High-Performance, Low-Loss SUPERFET V MOSFET Series for Server and Telecom Applications

     ON Semiconductor releases new 600 VSUPERFET V MOSFET series. These high-performance devices enable power supplies to meet stringent energy efficiency regulations, such as 80 PLUS Titanium, especially under challenging 10% load conditions. Three product groups under the 600 V SUPERFET family - FAST. Easy Drive and FRFET are optimized to provide class-leading performance in a variety of different applications and topologies. The 600 V SUPERFET V series offers excellent switching characteristics and low i] pole noise, thereby reducing electromagnetic interference (EMI), a significant benefit for server and telecom systems. In addition, the robust body diode and higher VGss (DC+30 V) enhance system reliability.

     Asif Jakwani, senior vice president and general manager of ON Semiconductor's Advanced Power Division, said: "The 80 Plus Titanium certification targets climate change and requires server and data storage hardware to achieve a power efficiency level of 90% at 10% load, while processing 96% efficiency at 50% load. The FAST. EasyDrive and FRFET versions of our SUPERFET V-Series are meeting these requirements, providing a robust solution that ensures continued system reliability.”

     The FAST version provides extremely high energy efficiency in hard switching topologies such as high-side PFCs and is optimized to provide lower gate charge (Qg) and Eoss losses for fast switching. Initial devices for this release include the NTNL 041N60S5H (41 mQ Rps(on) and NTHL185N60S5H (185 mQRps(on)), both in a TO-247 package. The NTP185N60S5H is in a TO-220 package, and the NTMT185N60S5H is in a 8.0mm x 8.0mm x 1.0mm package The Power88 package is guaranteed to meet the humidity sensitivity level MSL 1, and has a Kelvin (Kelvin) source architecture to improve | gate noise and switching losses.

     The Easy Drive version is suitable for both easy-switching and soft-switching topologies and includes a built-in [ ] pole resistor (Rg) and an optimized built-in capacitor. They are suitable for general use in many applications, including PFC and LLC. In these devices, the Rps(on) of the built-in Zener diode between gate and source exceeds 120 mQ, and the stress on the [ ] oxide is more Small, higher ESD durability, thereby increasing packaging yield and reducing defect rates. The two devices currently available, the NTHL099N60S5 and NTHL 120N60S5Z, have Rs(on) of 99 m0 and 120 mQ, both in TO-247 packages.

     Fast recovery (FRFET) versions are available for soft switching topologies such as Phase Shifted Full Bridge (PSFB) and LLC. Their advantage is fast body diodes and offer reduced Qr and Trr. Robust diode durability ensures higher system reliability. The Rps(on) of the built-in Zener diode NTP125N60S5FZ is 125 mQ in a TO-220 package, while the Rps(on) of the NTMT061N60S5F is 61 mQ in a Power88 package. The device with the lowest loss is the NTHL 019N60S5F, with an Rps(on) of only 19mQ, in a TO-247 package.