ON Semiconductor Announces New Complete SiC MOSFET Module Solutions for Electric Vehicle Charging at APEC 2021

     ON Semiconductor, driving energy-efficiency innovations, has released a pair of 1200 V complete silicon carbide (SiC) MOSFET 2-PACK modules, further enhancing its portfolio for the challenging electric vehicle (EV) market.

     As electric vehicle sales continue to grow, infrastructure that meets drivers' needs must be rolled out to provide a network of fast-charging stations that allow them to complete their journeys quickly without "range anxiety." Requirements in this area are rapidly evolving, requiring power levels in excess of 350 kW and an energy efficiency of 95% to become “the norm.” Given the different environments and locations these charging stations are deployed in, compactness, robustness, and enhanced reliability are all challenges for designers.

     New 1200 V M1 complete SiC MOSFET 2 pack module, based on planar technology, suitable for drive voltages in the 18 V to 20 V range, easy to drive with negative gate voltage. Its larger die reduces thermal resistance compared to trench MOSFETs, resulting in lower die temperature at the same operating temperature.

     The NXH010P120MNF is configured as a 2-PACK half-bridge architecture and is a 10 mohm device in an F1 package, while the NXH006P120MNF2 is a 6 mohm device in an F2 package. These packages feature press-fit leads ideal for industrial applications, and an embedded negative temperature coefficient (NTC) thermistor facilitates temperature monitoring.

     The new SiC MOSFET modules are part of ON Semiconductor's EV charging ecosystem and are designed to be used with driver solutions such as the NCD5700x devices. The recently introduced NCD57252 dual-channel isolated IGBT/MOSFET gate driver provides 5 kV of galvanic isolation and can be configured for dual lower, dual upper or half-bridge operation.

     The NCD57252 is available in a small SOIC-16 wide body package and accepts logic level inputs (3.3 V, 5 V and 15 V). This high-current device (4.0 A source/6.0 A sink at Miller plateau voltage) is suitable for high-speed operation because the typical propagation delay is 60 ns.

     Complemented by new modules and gate drivers, ON Semiconductor's SiC MOSFETs offer superior switching performance and enhanced heat dissipation over comparable silicon devices, resulting in higher energy efficiency and power density, improved electromagnetic interference (EMI), And reduce system size and weight.

     The recently released 650 V SiC MOSFETs feature a novel active cell design combined with advanced thin wafer technology to achieve a best-in-class (RDS(on)*area) Figure of Merit (FoM). Devices in this family such as NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC are the lowest RDS(on) MOSFETs on the market in the D2PAK7L / TO247 package.

     The small die size of 1200 V and 900 V N-channel SiC MOSFETs reduces device capacitance and gate charge (Qg - as low as 220 nC), thereby reducing switching losses for high frequency operation required by EV charging stations.