ON Semiconductor Announces High-Performance, Low-Loss SUPERFET V MOSFET Family for Server and Telecom

     Leading the way in smart power and intellisense technology, ON Semiconductor has released a new 600 V SUPERFETÒ V MOSFET series. These high-performance devices enable power supplies to meet stringent energy efficiency regulations such as 80 PLUS Titanium, especially under challenging 10% load conditions. The three product groups under the 600 V SUPERFET family - FAST, Easy Drive and FRFET are optimized to provide class-leading performance in a variety of different applications and topologies.

     The 600 V SUPERFET V-Series offers excellent switching characteristics and low gate noise, thereby reducing electromagnetic interference (EMI), a significant benefit for server and telecom systems. In addition, the robust body diode and high VGSS (DC ±30 V) enhance system reliability.

     Asif Jakwani, senior vice president and general manager of ON Semiconductor's Advanced Power Division, said: "The 80 Plus Titanium certification targets climate change and requires server and data storage hardware to achieve a power efficiency level of 90% at 10% load, while processing 96% efficiency at 50% load. The FAST, Easy Drive and FRFET versions of our SUPERFET V-Series are meeting these requirements, providing a robust solution that ensures continued system reliability.”

     The FAST version provides extremely high energy efficiency in hard switching topologies such as high-end PFCs and is optimized to provide lower gate charge (Qg) and EOSS losses for fast switching. Initial devices for this release include the NTNL041N60S5H (41 mΩ RDS(on)) and the NTHL185N60S5H (185 mΩ RDS(on)), both in TO-247 packages. NTP185N60S5H adopts TO-220 package, NTMT185N60S5H adopts 8.0mm x 8.0mm x 1.0mm Power88 package, which is guaranteed to reach MSL 1 of humidity sensitivity level, and has Kelvin (Kelvin) source architecture to improve gate noise and switching loss.

     The Easy Drive version is suitable for hard-switching and soft-switching topologies and includes a built-in gate resistor (Rg) and an optimized built-in capacitor. They are suitable for general use in many applications, including PFC and LLC. In these devices, the built-in Zener diode between gate and source has an RDS(on) of over 120 mΩ, less stress on the gate oxide, and higher ESD robustness, resulting in higher package yield and lower defect rates. The two devices currently available, the NTHL099N60S5 and NTHL120N60S5Z, have RDS(on) of 99 mΩ and 120 mΩ, both in TO-247 packages.

     Fast recovery (FRFETÒ) versions are available for soft switching topologies such as Phase Shifted Full Bridge (PSFB) and LLC. Their advantage is fast body diodes and offer reduced Qrr and Trr. Robust diode durability ensures higher system reliability. The NTP125N60S5FZ with built-in Zener diode has an RDS(on) of 125 mΩ in a TO-220 package, while the NTMT061N60S5F has an RDS(on) of 61 mΩ in a Power88 package. The lowest loss device is the NTHL019N60S5F with an RDS(on) of only 19 mΩ in a TO-247 package.