Nexperia's new application-specific MOSFETs (ASFETs) for hot swap increase SOA by 166% and reduce PCB footprint by 80%

     Nexperia, a specialist in basic semiconductor devices, announces new 80 V and 100 V ASFETs with enhanced SOA performance for hot-swap and soft-start applications in 5G telecom systems and 48 V server environments and requiring e-fuse and battery Protected industrial equipment.

     ASFET is a new type of MOSFET optimized for specific application scenarios. By focusing on a specific parameter that is critical to an application, it is sometimes necessary to sacrifice other less important parameters in the same design to achieve a whole new level of performance. The new hot-swap ASFETs combine Nexperia's latest silicon technology with a copper clip package structure to significantly enhance the safe operating area (SOA) and minimize PCB area.

     Previously, MOSFETs were heavily affected by the Spirito effect, causing SOA performance to rapidly degrade due to thermal instability at higher voltages. Nexperia's rugged enhanced SOA technology eliminates the "spirito-knee" and provides a 166% increase in SOA at 50 V compared to previous generations of D2PAK.

     Another important improvement is the addition of a 125 °C SOA feature to the data sheet. Mike Becker, Senior Marketing Manager of International Products at Nexperia, said: "The SOA was previously specified only at 25 °C, which meant that for operation in high temperature environments, designers had to derate. Our new hot-swap ASFETs include a 125 °C SOA. specification, eliminating this time-consuming task and confirming the excellent performance of Nexperia's devices even at high temperatures."

     The new PSMN4R2-80YSE (80 V, 4.2 m) and PSMN4R8-100YSE (100 V, 4.8 m) hot-swap ASFETs are housed in the Power-SO8 compatible LFPAK56E package. The package's unique internal copper clip structure improves thermal and electrical performance while greatly reducing pin size. The new LFPAK56E product size is only 5 mm x 6 mm x 1.1 mm, compared with the previous generation D2PAK, the PCB footprint size and device height are reduced by 80% and 75%. In addition, the device has a maximum junction temperature of 175 °C, which complies with IPC9592 specifications for telecom and industrial applications.

     Becker added: "An additional advantage is improved current sharing in high power applications where multiple hot-swap MOSFETs are used in parallel, which increases reliability and reduces system cost. Nexperia is widely recognized as a hot-swap MOSFET. Pull the MOSFET market leader. With these latest ASFETs, we are raising the bar once again.”