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Nexperia introduces a new 40 V low RDS(on) MOSFETs for automotive and industrial applications

Jul 16 2021 2021-07 Power Nexperia
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Nexperia announced the introduction of a new 0.55 mΩ RDS(on) 40 V power MOSFET in a highly reliable LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. These devices are among the lowest RDS(on) values Nexperia has ever produced for 40 V devices, and more importantly, they offer more than 50 times the power density of conventional D2PAK devices. In addition, these new devices provide higher performance in avalanche and linear modes, resulting in increased durability and reliability.

     Nexperia announced the introduction of a new 0.55 mΩ RDS(on) 40 V power MOSFET in a highly reliable LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. These devices are among the lowest RDS(on) values Nexperia has ever produced for 40 V devices, and more importantly, they offer more than 50 times the power density of conventional D2PAK devices. In addition, these new devices provide higher performance in avalanche and linear modes, resulting in increased durability and reliability.

 

     Neil Massey, Product Marketing Manager at Nexperia, commented: "The new 8 x 8 mm LFPAK88 MOSFET combines the latest high performance superjunction silicon technology with the proven LFPAK copper chip technology, which is known for providing significant electrical and thermal performance. The low RDS(on) allows us to pack more chips into the package, increasing power density and reducing device pin size."

 

     Measuring just 8 x 8 x 1.7 mm, these new power MOSFETs feature leading linear mode/safe working area (SOA) features for safe and reliable on-off operation under high current conditions. Under 1 ms, 20 VDS operating conditions, SOA is 35 A due to the combination of chip and package, while under 10 ms, 20 VDS operating conditions, package will play A dominant role at this time, SOA is 17 A. These data are 1.5 to 2 times better than competing products. These devices also offer an optimal monopulse Avalanche rating (EAS) of 2.3J and A super strong ID current rating of 500 A, which, unlike competing devices, is a measured limit rather than a theoretical one.

 

     With Nexperia's 8 x 8 mm LFPAK88 MOSFETs in terms of size and performance, designers were able to replace two parallel older devices with one new LFPAK88, simplifying manufacturing and improving reliability. The AEC-Q101-compliant BUK7S0R5-40H device provides twice the reliability required by vehicle specification standards for braking, power steering, battery anti-reverse protection, e-fuse, DC-DC converters and motor control applications. Industrial PSMNR55-40SSH MOSFETs are suitable for battery isolation, current limiting, e-fuse, motor control, synchronous rectification and load switching applications in power tools, appliances, fans, e-bikes, scooters and wheelchairs.

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