Nexperia Introduces New Enhanced Electrothermal Model for MOSFET Devices

     Nexperia, the high-volume production specialist in basic semiconductor components, announces a new enhanced electrothermal model for MOSFET devices. Semiconductor manufacturers often provide simulation models for MOSFETs, but are generally limited to a small number of device parameters modeled at typical operating temperatures. Nexperia's new advanced models capture a complete range of device parameters over the entire operating temperature range of -55°C to 175°C.

     Reverse diode recovery time and electromagnetic compatibility (EMC) are added to these advanced models, greatly improving the overall device accuracy. Parameters help engineers create accurate circuit and system-level simulations and evaluate thermal and EMC performance before prototyping. Models also help save time and resources, engineers who previously needed to ensure their designs would work in the (unlikely) worst-case scenario can now simulate designs over a specific temperature range.

    Nexperia has partnered with a Tier 1 OEM to develop these models, which only Nexperia can currently meet. "These new advanced electrothermal models are designed to provide designers with the highest confidence in circuit simulation results," said Andy Berry, applications engineer at Nexperia. "In double-pulse testing, the models made accurate predictions of real device behavior, demonstrating their Excellent high accuracy. Our partners said in initial feedback that these models are the most accurate they have ever seen.”

    Following the release of Nexperia's popular interactive application notes, these advanced electrothermal models are the latest in a series of supporting tools designed by our engineering team for our fellow engineers and are scheduled to be released in the coming months. This new tool to support external activities is designed to provide Nexperia's customers with as seamless a device design as possible.