Nexperia Continues to Expand Wide Bandgap Semiconductor Products with New Line of High-Performance Silicon Carbide (SiC) Diodes

     Nexperia, an expert in the field of basic semiconductor components, announced the launch of 650V, 10A SiC Schottky diodes, officially entering the high-power silicon carbide (SiC) diode market. This is a strategic move for Nexperia, a reliable supplier of high-efficiency power gallium nitride (GaN) FETs, to expand its product range of high-voltage wide-bandgap semiconductor devices.

     Nexperia's first SiC Schottky diode is an industrial-grade device with a peak repetitive reverse voltage of 650V (VRRM) and a continuous forward current of 10A (IF), designed for ultra-high performance, high efficiency, low loss. And a high-voltage compatible pure 2-lead (R2P) package with higher creepage distances, allowing this series of diodes to be used in surface mount (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, TO-247 -2) Devices. Engineering samples are available now and a full product release is planned for the second quarter of 2022. Nexperia plans to continue expanding its SiC diode product portfolio, with a total of 72 products expected to operate in the 650V and 1200V voltage, 6-20A current range.

     With increasing energy awareness, there is a growing demand for high-power applications with excellent efficiency and power density. And in this regard, silicon will soon reach its physical limit. Mark Roeloffzen, general manager of Nexperia's Bipolar Discrete Division, said: "Wide-bandgap semiconductors such as gallium nitride and silicon carbide are now well suited to the stringent requirements of high-volume applications, bringing greater efficiencies to OEMs and power density, reducing system and operating costs. Nexperia’s broad portfolio of SiC diodes will bring more choice and convenience to the market.”