Nexperia Boosts Power Efficiency with New 1200V SiC Schottky Diodes

Jul 19 2025 2025-07 Passive Components Nexperia

Nexperia is making significant strides in power electronics, recently expanding its portfolio with two new 1200V, 20A silicon carbide (SiC) Schottky diodes: the PSC20120J and PSC20120L. These additions are set to meet the growing demand for ultra-low power rectifiers in industrial applications, playing a crucial role in highly energy-efficient power conversion.

These devices are particularly well-suited for demanding applications like power supplies in high-power artificial intelligence (AI) server infrastructure, telecommunications equipment, and solar inverters. As industries increasingly prioritize energy efficiency and robust performance, Nexperia's latest offerings arrive at a pivotal moment.

What makes these new SiC Schottky diodes stand out? They boast temperature-independent capacitive switching and zero recovery performance, which translates to advanced performance and an excellent figure of merit (QC x VF). Furthermore, their switching performance remains largely unaffected by variations in current and switching speed, offering consistent reliability.

A key innovation in these devices is the Merged PiN Schottky (MPS) structure. This design provides several benefits, notably exceptional surge current capability due to a high peak forward current (IFSM). This feature is a game-changer, as it reduces the need for additional protection circuitry, significantly lowering system complexity. For engineers, this means achieving higher efficiency in high-voltage applications with a smaller footprint.

The new diodes come in two robust, thermally stable packages, designed for optimal performance in high-voltage environments:

The PSC20120J is available in a true 2-pin D2PAK R2P (TO-263-2) surface-mount (SMD) power plastic package.
The PSC20120L is offered in a true 2-pin TO247 R2P (TO-247-2) through-hole power plastic package.

Both packages are engineered to enhance device reliability in high-voltage applications, supporting operating temperatures up to 175°C. Nexperia, as a reputable manufacturer of high-quality semiconductor products with a strong supply chain, continues to instill confidence in designers looking for dependable solutions.

These new SiC Schottky diodes from Nexperia underscore a broader industry trend towards more efficient and robust power electronics, essential for the evolving demands of AI, telecom, and renewable energy sectors. What other innovations do you think will drive the next wave of power efficiency?

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