Microchip introduces the new GMICP2731-10 GaN MMIC power amplifier

Aug 8 2021 2021-08 Connectors Microchip Technology

Satellite communication systems use complex modulation schemes to achieve extremely fast data rates for transmitting video and broadband data. Therefore, they must have high RF output power while ensuring that the signal retains its desired characteristics. Microchip Technology announced the introduction of the new GMICP2731-10 GaN MMIC power amplifier to meet these requirements. The new device is Microchip's first GaN MMIC (Gallium nitride monolithic microwave integrated circuit) and is designed for commercial and defense satellite communications, 5G networks, and other aerospace and defense systems.

GMICP2731-10 is manufactured using silicon carbon-based gallium nitride technology. It delivers up to 10W of saturated RF output power over 3.5GHz bandwidths between 27.5 and 31 GHz. The power of GMICP2731-10 can be increased by 20% on this basis; The small signal gain is 22 dB; The return loss is 15 dB. In addition, the new device has a balanced structure that matches 50 ohm resistors well and integrates a DC blocking capacitor at the output to simplify design integration.

Leon Gross, Microchip's vice president of discrete Products, said: "With the adoption of complex modulation schemes such as 128-QAM in communication systems and the rising power of solid-state power amplifiers (SSPA), RF power amplifier designers are faced with the difficult challenge of reducing weight and power consumption while finding higher power solutions. The GaN MMIC used in high-power SSPAs can reduce power consumption and weight by more than 30% compared to its GaAs counterparts, which is a huge advantage for satellite Oems. The new products demonstrate the benefits of gallium nitride technology and meet the size, weight, power and cost requirements of original equipment manufacturers."

The GMICP2731-10 further expands Microchip's existing product lineup to include gallium arsenide MMIC RF power amplifiers, switches, low noise amplifiers, and Wi-Fi front-end modules, as well as silicon-based Gallium nitride High electron Mobility transistor (HEMT) drivers and final amplifier transistors for radar systems.

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