Microchip introduces 1700V Silicon Carbide MOSFET bare metal, discrete devices, and power modules

     Today's energy-efficient charging systems that power commercial vehicle propulsion systems, as well as auxiliary power systems, solar inverters, solid-state transformers, and other transportation and industrial applications rely on high-voltage switching power supplies. To meet these needs, Microchip Technology announced the expansion of its silicon carbide product portfolio with a series of highly efficient and reliable 1700V silicon carbide MOSFET bare metal, discrete devices, and power modules.

     Microchip's 1700V silicon carbide technology is an alternative to silicon IGBTs. Because the loss problem of silicon IGBTs limited the switching frequency, previous technologies required designers to compromise on performance and use complex topologies. In addition, the size and weight of power electronic systems are bloated by transformers, and the size can only be reduced by increasing the switching frequency.

     The new silicon carbide family enables engineers to move away from IGBTs in favor of two-stage topologies with fewer parts, higher efficiency and simpler control schemes. Without switching restrictions, the size and weight of power conversion units can be greatly reduced, freeing up room to build more charging stations, provide more space to carry paying passengers and cargo, or extend the range and operating time of heavy-duty vehicles, electric buses, and other battery-powered commercial vehicles, all of which can reduce overall system costs.

     "System developers in the transportation space are constantly being asked to fit more people and cargo in vehicles that can't get bigger," said Leon Gross, vice president of Microchip's Discrete Products business unit. One of the best ways to help achieve this goal is to dramatically reduce the size and weight of power conversion equipment while increasing efficiency by utilizing high-voltage silicon carbide power devices. Applications in the transportation industry can bring similar benefits to many other industry applications."

     New product features include gate oxide stability, which Microchip observed in repeated non-clamp sensing switch (R-UIS) tests without threshold voltage drift, even after extending to 100,000 pulses. The R-UIS tests also demonstrated excellent avalanche resistance and parametric stability, as well as gate oxide stability, resulting in reliable operation over the life of the system. The use of silicon carbide MOSFEts eliminates the need for external diodes. Short circuit tolerance comparable to IGBTs can withstand harmful electrical transients. In the junction temperature range of 0 to 175 degrees Celsius, the flatter RDS (on) curve allows the power system to operate more stably than the more temperature sensitive silicon carbide MOSFETs.

     Microchip has simplified the adoption of technology in a standard and customizable form with the AgileSwitch® family of digital programmable gate drivers and a variety of discrete and power modules. These gate drivers help speed the development of silicon carbide from experiment to production.

     Microchip's other silicon carbide products include the 700V and 1200V MOSFETs and Schottky barrier diode families, available in bare chip and a variety of discrete and power module packages. Microchip's combination of in-house silicon carbide bare chip production with low-inductive power packages and digitally programmable gate drivers enables designers to create the most efficient, compact and reliable end products.