Microchip Introduces Latest Generation of Automotive 700 and 1200V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

     The wave of automotive electrification is sweeping the world, and high-voltage automotive systems such as motors, on-board chargers, and DC/DC converters in electric vehicles all require innovative power technologies such as silicon carbide (SiC). Microchip Technology Inc announces its latest certified 700 and 1200V Silicon Carbide (SiC) Schottky Barrier Diode (SBD) power devices, providing electric vehicle (EV) system designers with solutions that meet stringent automotive quality standards, It also supports a wide range of voltage, current and package options.

     Microchip's new AEC-Q101 qualified device maximizes system reliability and durability for stable and long-lasting electric vehicle power supply designers who need to maintain high quality while increasing system efficiency application life. The superior avalanche rectification performance of the new device allows designers to reduce the need for external protection circuitry, reducing system cost and complexity.

     "As a long-term supplier to the automotive industry, Microchip continues to expand automotive power solutions and lead the transformation of power systems in automotive electrification," said Leon Gross, vice president of Microchip's discrete business unit. "We have always focused on providing automotive solutions that help customers easily Transition to silicon carbide (SiC) while minimizing risk to quality, supply and support challenges.” Microchip has been a supplier to the automotive industry for over 25 years. With Silicon Carbide (SiC) technology and multiple IATF 16949:2016 certified manufacturing facilities, the company provides high-quality devices through flexible manufacturing options that help minimize supply chain risk.

     Through Microchip's internal and third-party testing, key reliability indicators have proven that Microchip's devices perform better than SiC devices produced by other manufacturers. Unlike other silicon carbide (SiC) devices that degrade under extreme conditions, Microchip devices remain stable, helping to extend application life. Microchip's Silicon Carbide (SiC) solutions lead the industry in reliability and durability. Its ruggedness testing shows Microchip's Silicon Carbide Schottky Diodes (SiC SBDs) have a 20% improvement in energy handling capability in Unclamped Inductive Switching (UIS) with minimal current leakage at high temperatures, resulting in longer system life, for more reliable operation.

     Microchip's SiC automotive power devices further expand its broad portfolio of controllers, analog and connectivity solutions, providing designers with total system solutions for electric vehicles and charging stations. Microchip also offers a broad portfolio of 700, 1200 and 1700V Silicon Carbide Schottky Diodes (SiC SBDs) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET) power modules utilizing the latest generation of Silicon Carbide (SiC) die. In addition, Microchip's dsPIC® digital signal controllers offer high performance, low power consumption and flexible peripherals. Microchip's AgileSwitch family of digital programmable gate drivers further accelerates the process from the design phase to production. These solutions can also be applied in renewable energy, grid, industrial, transportation, medical, data center, aerospace and defense systems.