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Microchip Introduces Industry-Leading 3.3 kV Silicon Carbide (SiC) Power Devices

Mar 26 2022 2022-03 Semiconductors Microchip Technology
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Microchip Technology Inc. announced the expansion of its silicon carbide product portfolio with the introduction of the 3.3 kV silicon carbide MOSFET with the lowest on-resistance [RDS(ON)] in the industry and the Silicon Carbide SBD with the highest current rating, allowing designers to take full advantage of its durability, reliability and performance. Microchip's expanded silicon carbide product portfolio facilitates the development of smaller, lighter and more efficient solutions for designers of electrified transportation, renewable energy, aerospace and industrial applications

     Microchip Technology Inc. announces the expansion of its SiC product portfolio with the industry's lowest on-resistance [RDS(on)] 3.3 kV SiC MOSFETs and highest current rated SiC SBDs, allowing designers to take advantage of its robustness, reliability sex and performance. Microchip's expanded silicon carbide product portfolio facilitates the development of smaller, lighter and more efficient solutions for designers of electrified transportation, renewable energy, aerospace and industrial applications.

     Many silicon-based designs have reached their limits in terms of improving efficiency, reducing system cost, and applying innovation. While high-voltage SiC offers an effective alternative to achieve these goals, the market supply of 3.3 kV SiC power devices has so far remained limited. Microchip already offers 700V, 1200V and 1700V die, discretes, modules and digital gate drivers and other silicon carbide solutions, and the addition of 3.3 kV MOSFETs and SBDs enriches this range of solutions.

     Microchip's 3.3 kV silicon carbide power devices include MOSFETs with the industry's lowest on-resistance of 25 milliohms (mOhm) and SBDs with the industry's highest current rating of 90 amps. Both MOSFETs and SBDs are available in die or package form. These enhanced performance levels can help designers simplify designs, create higher-power systems, and use fewer parallel components for smaller, lighter, and more efficient power solutions.

     "We are focused on developing solutions that provide customers with the ability to rapidly innovate their systems and help their end products gain a competitive advantage faster," said Leon Gross, vice president of Microchip's discrete business unit. "Our new 3.3 kV silicon carbide power products The series enables customers to easily, quickly and confidently adopt high-pressure silicon carbide, and customers benefit from the many advantages this exciting technology brings compared to silicon-based designs."

     Over the past three years, Microchip has released hundreds of SiC power devices and solutions, ensuring designers can find the right voltage, current and package for their application needs. Microchip designs all SiC MOSFETs and SBDs with customer trust in mind, delivering industry-leading product durability and reliability. The company follows the practice of discontinuing production at the customer's discretion, and Microchip will continue to manufacture these products for as long as the customer needs it.

     Customers can combine Microchip's silicon carbide products with the company's other devices, including 8-bit, 16-bit and 32-bit microcontrollers (MCUs), power management devices, analog sensors, touch and gesture controllers, and wireless connectivity solutions. Build a complete system solution at a lower total system cost.

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