Microchip Continues to Expand Gallium Nitride (GaN) RF Power Device Portfolio

     Microchip Technology Inc announced a significant expansion of its gallium nitride (GaN) radio frequency (RF) power device portfolio with new monolithic microwave integrated circuits (MMICs) and discrete transistors at frequencies up to 20 gigahertz (GHz). Combining high power-added efficiency (PAE) and high linearity, these devices provide new levels of performance for applications such as 5G, electronic warfare, satellite communications, commercial and defense radar systems, and test equipment

     As with all of Microchip's GaN RF power products, the new devices are fabricated using GaN-on-SiC technology, offering the best combination of high power density and yield, operating at high voltages, and over 1 million lifetimes at 255°C junction temperature Hour.

     These products include 12 to 20 GHz GaN MMICs covering 2 to 18 GHz, 12 to 20 GHz, 3 dB compression point (P3dB) RF output power up to 20 W, and efficiency up to 25%; for S- and X-band, PAE Die and packaged GaN MMIC amplifiers up to 60%, and discrete High Electron Mobility Transistor (HEMT) devices covering DC to 14 GHz, P3dB RF output power up to 100W, and 70% maximum efficiency.

     "Microchip continues to invest in building a family of GaN RF products to support a wide variety of applications at all frequencies from microwave to millimeter wavelengths," said Leon Gross, vice president of Microchip's discrete products business unit. "Our product portfolio includes more than 50 products ranging from low power levels to 2.2 kilowatts. The products announced today span 2 to 20 GHz and are designed to address the linearity and efficiency challenges posed by the higher-order modulation techniques employed in 5G and other wireless networks, as well as the unique needs of satellite communications and defense applications.”

     In addition to GaN devices, Microchip's RF semiconductor portfolio includes gallium arsenide (GaAs) RF amplifiers and modules, low noise amplifiers, front-end modules (RFFEs), varactors, Schottky and PIN diodes, RF switches and voltage variable Attenuator. In addition, the company offers high-performance surface acoustic wave (SAW) sensors and microelectromechanical systems (MEMS) oscillators as well as highly integrated modules. These modules combine a microcontroller (MCU) with a radio frequency transceiver (Wi-Fi® MCU) to support major short-range wireless communication protocols from Bluetooth and Wi-Fi to LoRa.