MDmesh DM9 overjunction MOSFET improves silicon chip energy efficiency

     These silicon-based transistors have excellent on-resistance RDS(on) per chip area and very low gate charge, combined with very low energy loss and excellent switching performance, and the quality factor has become a new market benchmark. St's latest MDmesh DM9 technology ensures a narrower distribution of gate source threshold voltages (VGS(th)), resulting in sharper switching waveforms and lower on-off and off-off losses than the previous generation.

     The STPOWER MDmesh DM9 AG series' 600V/650V overjunction MOSFETs offer superior energy efficiency and robustness for on-board chargers (OBC) and DC/DC converter applications using hardware/software switching topologies.

     These silicon-based transistors have excellent on-resistance RDS(on) per chip area and very low gate charge, combined with very low energy loss and excellent switching performance, and the quality factor has become a new market benchmark. St's latest MDmesh DM9 technology ensures a narrower distribution of gate source threshold voltages (VGS(th)), resulting in sharper switching waveforms and lower on-off and off-off losses than the previous generation.

     In addition, the new product also improves the reverse recovery performance of the bulk diode, and the new optimization process improves the overall robustness of the MOSFET. The low reverse recovery charge (Qrr) and fast recovery time (trr) of the bulk diode make the MDmesh DM9 AG series ideal for phase-shift zero-voltage switching topologies that require high energy efficiency.

     The series offers a variety of through-hole and surface-mount packages to help designers achieve compact form factor, high power density and system reliability. TO-247 LL (Long Lead) is a popular through-hole package that simplifies device integration in the design and follows proven packaging processes. In surface-mount packages, H2PAK-2 (2-lead) and H2PAK-7 (7-lead) are suitable for bottom heat dissipation designs with heat dissipating substrates or PCB boards with heat through holes or other enhanced heat dissipation features. Both new products are also available in HU3PAK and ACEPACK™ SMIT top-heat surface mount packages.

     The first product of the STPOWER MDmesh DM9 AG series, STH60N099DM9-2AG, is a 27A n-channel 600V device in an H2PAK-2 package conforming to the AEC-Q101 standard, with a typical on-resistance RDS(on) of 76 Mω. St will expand the product range to offer a full range of models covering a wider rated current range and on-resistance RDS(on) from 23 Mω to 150 Mω.