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Littelfuse 1700V silicon Carbide Schottky Barrier diodes provide faster switching and higher efficiency

Sep 6 2021 2021-09 Passive Components Littelfuse
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Littelfuse announced the expansion of its silicon carbide (SiC) diode portfolio with the addition of 1700 V class products. The LSIC2SD170Bxx series silicon carbide Schottky diodes are available in a TO-247-2L package with a choice of rated current (10A, 25A or 50A).

Littelfuse announced the expansion of its silicon carbide (SiC) diode portfolio with the addition of 1700 V class products. The LSIC2SD170Bxx series silicon carbide Schottky diodes are available in a TO-247-2L package with a choice of rated current (10A, 25A or 50A). These products offer power electronics system designers multiple performance benefits, including near-zero reverse recovery currents, high surge protection and a maximum operating junction temperature of 175°C, making them ideal for applications that require improved efficiency, reliability and simplified thermal management.

 

Silicon carbide Schottky barrier diodes are ideal for a variety of AC/DC and DC/DC power converters in industry, energy production and energy distribution/storage, including:

● Industrial switching mode power supply

● Uninterruptible power supply

● Battery charger

● Solar inverter

● Industrial motor drivers

● High-speed rectifier

 

"Using silicon carbide diodes in power supply designs instead of diodes based on traditional silicon-based technologies helps designers develop more energy efficient power converters that save energy and reduce costs associated with cooling power electronics." Francois Perraud, product marketing manager for Littelfuse Silicon Carbide, said, "These products enable the design of switching power electronics that are more responsive in the converter, which can then be made more compact in the form of the same output power, or provide higher power in the same volume."

 

LSIC2SD170Bxx Silicon Carbide Schottky diode has the following key advantages:

● The positive temperature coefficient of the forward voltage ensures safe operation and simplifies parallel operation

● Extremely fast, temperature-independent switching

● Significantly reduced switching loss compared to silicon bipolar diodes

● Optimize the overall system efficiency

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