
Kioxia Corporation announced the release of Universal Flash Memory (UFS) version 3.1 embedded flash memory devices. The device uses its innovative Quad-Level Cell (QLC) technology of 4 bytes per cell. Kioxia's QLC technology can achieve extremely high storage density in a single package, meeting the needs of applications requiring high storage density such as high-end smartphones.
Kioxia's UFS proof-of-concept (PoC) device is a 512-gigabyte prototype using the company's 1-terabit (128-gigabyte) BiCS FLASH™ 3D flash memory based on QLC technology and is currently sampling to OEM customers. Driven by applications such as higher resolution images, 5G networks, video beyond 4K, and more, this proof-of-concept device is designed to meet the ever-increasing demands for performance and storage density in mobile applications.
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