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Infineon sets new standards in technology with power MOSFETs in PQFN 2x2 package

Mar 25 2022 2022-03 Sensors Infineon Technologies
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Infineon Technologies Inc. has launched its new OptiMOSTM 5 25 V and 30 V power MOSFETs in a PQFN 2 x 2 mm2 package, aiming to set a new industry standard for discrete power MOSFETs. Using thin wafer technology and innovative packaging, these new devices offer significant performance advantages in extremely small sizes.

     Infineon Technologies AG has launched a new family of OptiMOSTM 5 25 V and 30 V power MOSFETs in a PQFN 2 x 2 mm2 package, aiming to set a new industry standard for discrete power MOSFET technology. Using thin wafer technology and innovative packaging, these new devices offer significant performance advantages in extremely small dimensions. The OptiMOS 5 25 V and 30 V power MOSFET product family has been optimized for synchronous rectification in SMPS applications such as servers, communications, portable chargers and wireless charging. These power MOSFETs can also be used in drones, in ESC (Electronic Speed Control) modules for small brushless motors. As we all know, drones often require components that are small in size and light in weight.

     Housed in a PQFN 2x2 package, these leading power MOSFET devices offer higher power density, small form factor, and the industry's lowest on-resistance to further reduce power consumption. The small package size of 2 x 2 mm2 provides higher flexibility for PCB layout. In addition, the solution has excellent electrical performance to further increase the power density of the end application and reduce the form factor. At the same time, the reduction of system temperature and the improvement of performance also make thermal management easier. These features help enable smaller customer applications, maximize space savings, reduce system cost, and create products that are easy to design.

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