Infineon launches new generation of EiceDRIVER 2EDN gate driver chip family

     Infineon Technologies AG has introduced a new generation of the EiceDRIVER™ 2EDN gate driver chip family. The new devices complement the existing line of 2EDN driver chips, reducing the number of external components and saving design space, resulting in higher system efficiency, superior power density and continued system robustness. With the introduction of new products, 2EDN series driver chips can be widely used in servers, telecom equipment, DC-DC converters, industrial SMPS, electric vehicle charging piles, motor control, low-speed light electric vehicles, power tools, LED lighting and solar energy systems and other applications, to improve the performance of power switching devices.

     The new generation EiceDRIVER 2EDN driver chip family includes robust dual-channel low-side 4 A/5 A gate driver ICs. It is suitable not only for high-speed power MOSFETs, but also for switching devices based on wide bandgap (WBG) materials. These gate drivers can help engineers meet the design requirements of different package sizes, ensure that the system is safely shut down before entering the undervoltage lockout (UVLO) state, and accelerate the response speed of the UVLO function, thereby ensuring stable operation of the system and enhanced anti-jamming capability .

     The new generation EiceDRIVER 2EDN driver chip family has 14 devices in a variety of packages. In addition to the compatible and interchangeable 8-pin DSO, TSSOP and WSON packages, Infineon now offers ultra-small 6-pin SOT23 (2.8 x 2.9 mm2) and TSNP (1.1 x 1.5 mm2) packages ). The SOT23 and TSNP packages eliminate the infrequently used enable (EN) signal, which saves space, optimizes system design, increases power density, and improves robustness to temperature cycling on board (TCoB).

     Designers can choose between 4 V or 8 V UVLO options to provide instantaneous UVLO protection for power switches during abnormal conditions. In essence, these new products reduce UVLO hysteresis time, enter UVLO mode faster, and more than double the response time from start-up and burst mode to UVLO function. In addition, they feature highly accurate, exact rail-to-rail output, and fast active output clamping at VDD at 1.2 V. Clamping is typically achieved in as little as 20 ns, which further increases the robustness of the system.