Infineon launches new EasyDUAL CoolSiC MOSFET power modules with high-performance AIN ceramics

     Infineon Technologies AG has upgraded the EasyDUAL CoolSiC MOSFET modules to a new aluminum nitride (AIN) ceramic. The device is used in a half-bridge configuration with an on-resistance (R DS(on)) of 11 mΩ for the EasyDUAL 1B package and 6 mΩ for the EasyDUAL 2B package. Upgraded to a high-performance AIN, the 1200 V device is suitable for high power density applications, including solar systems, uninterruptible power supplies, auxiliary inverters, energy storage systems, and EV charging piles.

     EasyDUAL modules FF11MR12W1M1_B70 and FF6MR12W2M1_B70 use the latest CoolSiC MOSFET technology with excellent gate oxide reliability. The thermal resistance from junction to heat sink (R thJH) can be reduced by up to 40% due to the higher thermal conductivity of the DCB material. In CoolSiC Easy modules, the new AIN ceramic can help increase output power or reduce junction temperature, which in turn can extend system life.