Infineon launches new 650 V CoolSiC Hybrid IGBT discrete device family offering excellent efficiency

     Infineon Technologies AG presents a single-tube portfolio of 650 V CoolSiC Hybrid IGBTs with 650 V blocking voltage. The new CoolSiC Hybrid product family combines the key advantages of 650 V TRENCHSTOP 5 IGBT technology and SiC Schottky diodes with excellent switching speed and lower switching losses, especially for DC-DC power converters and PFC circuits. Common applications include: electric vehicle charging facilities, energy storage systems, photovoltaic inverters, uninterruptible power supply systems (UPS), and switched mode power supplies (SMPS) for servers and telecommunications.

     Since the freewheeling SiC Schottky diode is co-packaged with the IGBT, the CoolSiC Hybrid IGBT can significantly reduce switching losses with almost constant dv/dt and di/dt values. Compared to standard silicon diode solutions, the new product can reduce Eon by up to 60% and Eoff by 30%. Alternatively, the switching frequency can be increased by at least 40% while the output power remains the same. Higher switching frequencies help reduce the size of passive components, which in turn reduces bill-of-materials costs. The Hybrid IGBT is a drop-in replacement for the TRENCHSTOP5 IGBT, enabling a 0.1% increase in efficiency per 10 kHz switching frequency without redesign.

     This product family serves as an alternative between pure silicon solutions and high-performance SiC MOSFET designs. Hybrid IGBTs improve electromagnetic compatibility and system reliability compared to pure silicon designs. Because SiC Schottky diodes commutate rapidly, there is no risk of severe oscillation and parasitic turn-on. This series provides TO-247-3 or TO-247-4 pin Kelvin Emitter package for customers to choose. The fourth pin of the Kelvin Emitter package enables an ultra-low inductance gate drive control loop and reduces overall switching losses.