Infineon launches automotive-grade high-voltage IGBT EDT2, which greatly improves the performance of electric vehicle discrete device inverters

     Infineon has launched a new EDT2 IGBT in the TO247PLUS package, which meets and exceeds the automotive-grade semiconductor discrete device stress test standard AECQ101, which can greatly improve the performance and reliability of the inverter system. The IGBT is designed with an automotive-grade micro-trench field stop cell, a technology that has been successfully used in several inverter modules such as EasyPACK 2B EDT2 and HybridPACK

     The TO247PLUS package has a larger creepage distance, which is more conducive to system design. The EDT2 technology is specially optimized for traction inverters, with a breakdown voltage of 750 V, which can support battery voltages up to 470 VDC, which can significantly reduce switching and conduction loss. Typically 120 A or 200 A rated current with very low forward voltage when operating at 100°C

     Compared with the previous generation, the conduction loss has been reduced by 13%, the parameter distribution is very tight, the collector-emitter saturation voltage (Vce(sat)) is less than 200 mV between the typical value and the maximum value, and the gate threshold voltage (VGEth ) differs by less than 750 mV, has a positive temperature coefficient of saturation voltage, smooth switching characteristics and low gate charge (QG), and has a maximum junction temperature (Tvjop) of 175°C