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Infineon launches EiceDRIVER F3 enhanced series of gate drivers

Mar 12 2022 2022-03 Semiconductors Infineon Technologies
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Infineon Technologies AG (announces the launch of the EiceDRIVER F3 (1ED332x) enhanced series gate drivers, further expanding its lineup of EiceDRIVER enhanced isolated gate drivers.

     The need to achieve the highest possible system efficiency in modern power electronic devices has also led to ever-increasing power densities of the devices. However, once a short-circuit failure occurs, it poses a threat to high-value systems. In order to avoid this situation and provide reliable protection for the system, Infineon Technologies AG (announced the EiceDRIVER™ F3 (1ED332x) reinforced series gate driver, further expanding its EiceDRIVER reinforced isolation gate driver Product lineup. This series of gate drivers provides reliable and comprehensive protection against short-circuit faults, allowing traditional power switches including IGBTs and CoolSIC™ wide bandgap devices to be effectively protected. This series of gate drivers is designed for industrial It is designed for applications such as drives, solar systems, electric vehicle charging, energy storage systems, and commercial air conditioners.

     The EiceDRIVER F3 Enhanced Series gate drivers are available in a DSO 16 300 mil wide body package with 8mm creepage distance. This single isolated gate driver features ultra-high Common Mode Transient Immunity (CMTI) up to 300 kV/us and typical output current up to 8.5 A. Channel-to-channel propagation delay matching with low dispersion helps minimize dead time, improves system efficiency, and reduces harmonic distortion. This series of gate drivers provides protection functions such as short-circuit clamp, active shutdown, and active Miller clamp.

     The EiceDRIVER F3 Enhanced Series gate drivers are suitable for a wide power range and can support an absolute maximum output voltage of 40 V. In addition, this series of gate drivers are high temperature resistant, suitable for fast switching applications, and can be used normally in harsh environments, making them ideal for driving traditional IGBT, IGBT7 and silicon carbide (SiC) MOSFETs. And, with a voltage rating of up to 2300 V, it supports power switches with blocking voltages over 1200 V. This series of gate drivers is also certified according to UL 1577 and VDE 0884-11 (Reinforced Insulation), ensuring high reliability in the application and guaranteeing a long service life.

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