Infineon introduces new gate driver ICs for 5G and LTE macro base stations

     Infineon Technologies AG has launched the new EiceDRIVER 2EDL8 gate driver IC product family to meet the growing demand for mobile network infrastructure DC-DC telecom bricks. These dual-channel junction isolated gate driver ICs provide high power density, high efficiency and ruggedness for isolated DC-DC buck converters/telecom bricks enabling macro base stations for 5G and LTE telecom infrastructure.

     The new 2EDL8 family consists of four versions with two different pull-up currents and two different input configurations. The 3A (Ampere) version is suitable for retrofit designs, and the industry-leading 4A (Ampere) version is suitable for reducing MOSFET switching losses.

     The dual channels of 2EDL802x can operate independently, and are ideal for primary side diagonal drive full bridge and secondary side synchronous rectification stage to reduce freewheeling loss. 2EDL812x adopts differential input structure and built-in shoot-through protection, which is the perfect choice for DC-DC brick converter off-diagonal drive primary side half-bridge stage

     The 2EDL8 features an integrated 120V bootstrap diode and precise channel-to-channel propagation delay matching (typical ± 2 ns). All products in this series are available in the industry standard PG-VDSON-8 leadless package and pin-out.