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Infineon introduces a new family of 650 V CoolSiC Hybrid IGBT discrete devices that deliver superior efficiency

Sep 5 2021 2021-09 Power Infineon Technologies
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Infineon Technologies introduces the 650 V CoolSiC™ Hybrid IGBT single tube portfolio with 650 V blocking voltage. The new CoolSiC Hybrid product family combines the main benefits of 650 V TRENCHSTOP™ 5 IGBT technology and silicon carbide Schottky diodes for excellent switching speeds and lower switching losses, especially for DC-DC power converters and PFC circuits

     Infineon Technologies introduces the 650 V CoolSiC™ Hybrid IGBT single tube portfolio with 650 V blocking voltage. The new CoolSiC Hybrid product family combines the main benefits of 650 V TRENCHSTOP™ 5 IGBT technology and silicon carbide Schottky diodes for excellent switching speeds and lower switching losses, especially for DC-DC power converters and PFC circuits. Common applications include electric vehicle charging facilities, energy storage systems, photovoltaic inverters, uninterruptible power systems (UPS), and servers and electrical switching power supplies (SMPS).

 

     Because the continuous-current SiC Schottky diode and IGBT are in a common package, the CoolSiC Hybrid IGBT can significantly reduce switching losses at almost constant dv/dt and di/dt values. Compared to standard silicon diode solutions, the new products can reduce Eon by up to 60% and Eoff by 30%. Alternatively, the switching frequency can be increased by at least 40% while the output power remains the same. Higher switching frequencies help reduce the size of passive components, thereby reducing bill of material costs. The Hybrid IGBT is a direct replacement for the TRENCHSTOP5 IGBT and can achieve a 0.1% efficiency improvement per 10 kHz switching frequency without redesign.

 

     As an alternative between pure silicon solutions and high performance SiC MOSFET designs, Hybrid IGBT offers improved electromagnetic compatibility and system reliability compared to pure silicon designs. Because SiC Schottky diodes can be commutated quickly, there is no risk of severe oscillation and parasitic conduction. The range is available in TO-247-3 or TO-247-4 pin Kelvin Emitter packages. The fourth pin of the Kelvin Emitter package enables ultra-low inductance gate drive control loops and reduces total switching losses.

 

     Yu Daihui, Vice President of Infineon Technologies and head of Industrial Power Control Greater China, said: "Our innovation comes from technological progress and customer demand. "By introducing Hybrid IGBT technology from modules to single tubes, we are able to meet our customers' demand for energy efficient systems and flexibility in system design, thereby enhancing their competitiveness."

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