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Infineon introduces a new IGBT that successfully reduces the total power consumption operating at 50Hz to 20kHz to the lowest level

Feb 14 2015 2015-02 Connectors Infineon Technologies
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Infineon Technologies AG introduces a new low saturation voltage drop VCE(sat) IGBT. This type of IGBT is optimized for the low switching frequency range of 50Hz to 20kHz. Switching frequencies in this range are commonly found in uninterruptible power supplies (UPS) as well as photovoltaic inverters and inverter welders.

     Infineon Technologies AG introduces a new low saturation voltage drop VCE(sat) IGBT. This type of IGBT is optimized for the low switching frequency range of 50Hz to 20kHz. Switching frequencies in this range are commonly found in uninterruptible power supplies (UPS) as well as photovoltaic inverters and inverter welders. The new L5 series is based on TRENCHSTOP™5 thin-chip technology, which further reduces the already low on-off loss due to the optimization of the carrier structure.

 

     With an impressive typical saturation pressure drop (VCE(sat)) of 1.05V at 25°C, this new IGBT successfully takes the efficiency level to a new level - replacing its predecessor TRENCHSTOP IGBT with the L5 series, which improves efficiency in NPC1 topologies by up to 0.1%. Increased by 0.3% in NPC 2 topology. Coupled with the positive temperature coefficient of the VCE(sat), the high efficiency can be maintained while being directly paralleled - setting the industry benchmark for IGBTs with frequencies below 20kHz. The TRENCHSTOP5 technology used to cast the new L5 series soul not only provides unmatched low conduction losses, but also reduces the total switching loss to 1.6 mJ at 25 ° C. In summary, the use of Infineon's new low saturation voltage drop IGBTs in low switching frequency applications improves efficiency, increases reliability and reduces the size of the system.

 

     The first wave of the new L5 IGBT series comes in the industry-standard TO-2473 pin package technology. In addition, for applications requiring further efficiency enhancements, Infineon offers L5 IGBTs in the TO-247 4-pin Kelvin-Emitter package. The TO-247 4-pin package has a 20% reduction in switching loss compared TO the standard TO-247 3-pin package. Thus, the combination of the L5 with the TO-247 4-pin package not only creates the ultimate low conduction energy consumption and low switching losses, it also helps Infineon TO consolidate its leading position in providing highly innovative and differentiated products for the high-power market.

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