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Infineon introduces OptiMOS™ 6 200 V MOSFETs, setting new industry standards with higher power density and efficiency

Mar 26 2024 2024-03 Connectors Infineon Technologies
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With the introduction of the OptiMOS™ 6 200 V MOSFET product family, Infineon Technologies AG has made a leap forward in motor drive applications. This new product portfolio will provide outstanding performance for applications such as electric motorcycles, micro electric vehicles and electric forklifts.

     With the introduction of the OptiMOS™ 6 200 V MOSFET product family, Infineon Technologies AG has made a leap forward in motor drive applications. This new product portfolio will provide outstanding performance for applications such as electric motorcycles, micro electric vehicles and electric forklifts. The new MOSFET products have improved on-loss and switching performance, reducing electromagnetic interference (EMI) and switching losses, benefiting a variety of switching applications for servers, telecommunications, energy storage systems (ESS), audio, solar and more.

 

     In addition, with a wide secure Workspace (SOA) and industry-leading RDS(on), the product family is ideal for static switching applications such as battery management systems. The new Infineon OptiMOS 6 200 V product family provides customers with increased power density, efficiency and system reliability, setting new industry standards.

 

     Compared to the previous generation OptiMOS™ 3, the OptiMOS™ 6 200 V portfolio has enhanced technical features with a 42% reduction in RDS(on), helping to reduce conduction losses and increase output power. In terms of diode performance, the OptiMOS™ 6 200 V is more than three times softer than OptiMOS™ 3, and the Qrr(typ) is reduced by 89%, resulting in significant improvements in both switching and EMI performance. The technology also improves parasitic capacitance linearity (Coss and Crss), reduces oscillations during switching and reduces voltage overshoot. Tighter VGS(th) distribution and low transconductance facilitate MOSFETs in parallel and current sharing, making temperatures more uniform and reducing the number of MOSFETs in parallel.

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