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Infineon introduced ultra reliable crimp IGBT, further expanding the product portfolio of Prime Switch series

Aug 31 2022 2022-08 Semiconductors Infineon Technologies
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Infineon Technologies Bipolar GmbH & Co. KG has further expanded its high-power Prime Switch product lineup with the launch of new opt-on IGBT (PPI) with internal continuous current diode (FWD) in ceramic plate package.

     Infineon Technologies Bipolar GmbH&Co. KG introduced a new crimp IGBT (PPI) with internal freewheeling diode (FWD) and ceramic flat panel packaging, further expanding its product portfolio of high-power Prime Switch series. The PPI is specially designed for power transmission and distribution applications and is an ideal choice for high current modular multilevel converters (MMC), medium voltage drivers, DC power grid circuit breakers, wind power converters and traction systems.


     The blocking voltage of Prime Switch IGBT is 4.5 kV, the current of model without FWD is 3000 A, and that of model with FWD is 2000 A. Infineon provides 3000A PPI with four kinds of external freewheeling diodes with different package diameters, namely D1600U45X122, D2700U45X122, D3900U45X172 and D4600U45X172. Combined with highly reliable crimping technology, this leading high-voltage IGBT chip trench technology, which has been put into practical application for more than 40 years, can provide customers with excellent high-performance solutions for ultra-high power applications. In addition, these devices open up new opportunities in reducing the loss and cost of high power applications and improving reliability.


     The encapsulation of PPI is sealed and designed to withstand failure events caused by the system. Therefore, in addition to the function of "short on fail", PPI also has a very strong package. In order to cover a wider range of applications and power ranges, Infineon has created an ideal product portfolio with different current values and topology structures by virtue of the innovative design of internal chip subunits and packages.

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