Infineon expands its line of radiation-resistant asynchronous static random access memory with embedded error-correcting codes

     Edge computing and inference on the satellite enable near real-time data analysis and decision making. This is becoming increasingly important as the number of connected devices and the amount of data they generate continues to grow. To meet the demand of space application of the high performance computing, infineon technologies co., LTD's InfineonTechnologiesLLCMemorySolution recently announced the infineon patent technology RADSTOP  design the latest anti radiation (radhard) asynchronous static random access memory. The new products are designed for space and other harsh environment applications where high reliability and performance are critical.

     In high-performance space computing, data buffering requires more memory than an MCU or FPGA on-chip memory can provide. Memory must provide higher performance for real-time processing applications and have excellent radiation resistance to meet mission requirements in harsh environments. Infineon's new radiation-resistant static random access memory (SRAM) is available in 8 -, 16 - and 32-bit wide configurations and comes with an embedded error correction code (ECC) for single-bit error correction. This advanced technology enables error correcting code (ECC) logic to detect and correct single-bit errors in any read data word within a read cycle.

     Dr. Helmut Puchner, Vice President and Research Fellow at Infinion Technologies Aerospace & Defense, said: "Radiation effects cause inevitable bit errors in static random access memory (SRAM), while the use of system-level error correction codes (ECC) increases design complexity and latency. Infineon's RADSTOP Asynchronous Static Random Access Memory (SRAM) provides an extremely reliable single-chip solution that addresses these issues while meeting the space industry's requirements for anti-radiation performance."

     Infineon's leading RADSTOP technology achieves radiation resistance through its own design and process enhancement to meet all radiation resistance requirements in extreme environments. The new radiation-resistant memory is QML-V certified to ensure reliability and life cycle requirements in extreme environments. With access times as short as 10 ns, these semiconductor devices are currently the fastest option. In addition, they provide the smallest plate area for the highest density and the lowest static current. The RADSTOP memory solution extends the computing limits of the entire system, while providing size, weight and power benefits as well as greater design flexibility.