High frequency miniaturized industrial power supply scheme of onsemi products

     At the moment when the topic of "double carbon" is becoming more and more intense, power semiconductor devices made of GaN GaN/SiC silicon carbide have entered the accelerated development lane. GaN and SiC are known as "broadband gap semiconductor (WBG)", which has excellent characteristics such as high temperature resistance, high voltage resistance, high frequency, high power, radiation resistance, etc., and can help products achieve higher switching efficiency. According to insiders, GaN is the closest to the ideal semiconductor switching device. It can achieve power conversion with very high efficiency and high power density, and easily meet the most stringent 80+specification for servers and cloud data centers or the EU Tier 2 standard for USB PD external adapters.

     The NCP51561 is A high-voltage isolated dual-channel gate driver from onsemi with 4.5A source current and 9A peak pour current capability. The new device is suitable for fast switching of silicon power MOSFETs and SIC-based MOSFETs, providing short and matched propagation delays.

     In addition, the NCP51561 features two independent 5kVRMS (UL1577 class) electrically isolated gate driver channels that can be used as two lower bridge, two upper bridge switches, or a half-bridge driver with programmable dead time. Not only that, one enabling pin of the device can turn off both outputs simultaneously, and the NCP51561 provides other important protection functions, such as independent undervoltage locking (UVLO) and enabling functions for both gate drivers. Thanks to these excellent functions, the energy conversion efficiency of miniaturized industrial power can be effectively improved.