EPC partners with MPS to develop more efficient, smaller, faster bidirectional converters based on new GaN FETs

     EPC Power Conversion Corporation (EPC) announces the EPC9165, a 2 kW, two-phase 48 V/14 V bidirectional converter that achieves 97% peak efficiency in a small form factor, ideal for high-density and high-power applications 48 V battery packs such as those required for electric and light transport.

     The solution is scalable. 4 kW can connect two converters in parallel, 6 kW can connect three converters in parallel, or 1 kW can use only one phase. In this application, the output voltage is 14 V. However, since this is a hard-switched buck converter topology, the output voltage can easily be adjusted to a voltage between 12 V and 36 V.

     The EPC9165 reference design uses the latest generation of 100 V GaN FETs (EPC2302). The EPC2302 achieves 101 A continuous current and 390 A pulsed current. Its exposed top thermally enhanced QFN package accelerates heat dissipation to the heat sink. Thermal resistance to the heat sink is 0.2 degrees Celsius per watt, and its wettable sides simplify assembly inspection and improve thermal cycling robustness. EPC2302 GaN FETs have ultra-low typical on-resistance RDS(on) values of only 1.4 mOhm typical and 1.8 mOhm maximum, and very small QG typical (23 nC), QGD typical 2.3 nC, QOSS typical Values are 85 nC and zero reverse recovery (QRR) for low conduction and switching losses.

     The EPC9165 reference design features a new 100 V automotive half-bridge driver (MPQ1918) developed by MPS specifically for GaN FETs in a small FCQFN package (3 x 3mm) with wettable sides for easy optical inspection. The device features 1.6 A peak source current and 0.2 Ω/1.2 Ω pull-down/pull-up resistors to use high power FETs with faster switching benefits for maximum efficiency and increased power density. Compared to other automotive half-bridge GaN drivers, the MPQ1918 offers higher efficiency, lower EMI and is extremely cost-effective.

    "The advantages of fast switching, small size and high efficiency of GaN FETs and ICs can further reduce the size and weight of 48 V/12 V and 14 V converters," said Alex Lidow, CEO of EPC Power Conversion. EPC9165 Reference design featuring MPS's 100 V automotive gate driver and EPC's first packaged device, the EPC2302, enables space- and weight-critical designs such as electric transport, enabling higher efficiency, higher power density, and design simplicity ".

    "The new MPS MPQ1918 leverages the benefits of high-performance GaN FETs to maximize efficiency and power density for high-power solutions," said Maurice Sciammas, vice president of sales and marketing at MPS. "EPC is a leader in power eGaN FETs, and we It is a pleasure to work with EPC to introduce this new solution, which will contribute to the efficiency and size reduction of bidirectional converters.”