EPC introduces new 80 V, 3.6 mΩ gallium nitride field-effect transistor

     EPC Power Conversion Corporation (EPC) is a global leader in enhanced silicon-based gallium nitride (eGaN) power transistors and integrated circuits. The new EPC2065 and EPC2054 have the advantages of higher performance and lower cost.

     The EPC2065 is an 80 V, 3.6 mΩ gallium nitride field-effect transistor (eGaN FET) that delivers 221 A pulsed current in a chip size of 7.1 mm2. The small size and superior efficiency make the overall power system smaller and lighter, and is ideal for 32V/48V BLDC motor drive applications in e-mobility, e-bikes and scooters, service, delivery, logistics robots and drones.

     In these applications, where the drive is integrated with the motor, miniaturization is a key factor. In addition, operating at significantly shorter dead zone times allows for less noise and lower EMI. The device is capable of operating at high frequencies, enabling high frequency DC/DC converters for simultaneous rectification for computing and industrial applications to achieve the highest power density.

     The EPC2054 is A 200 V, 3.6 mΩ eGaN FET in a microchat-scale package (1.69 mm2) that delivers 32 A pulse current, ultra-miniaturization, very fast switching times, and ultra-small capacitors and inductors. Making it an ideal device for industrial LiDAR /ToF applications. Due to the EPC2054's advantages of low resistance, low switching loss, no reverse recovery charge, fast switching, operation at high frequencies, and small board area, low-cost solutions with high power density can be achieved. Suitable for, but not limited to, high frequency DC/DC converters, synchronous rectification, wireless power, Class D audio amplifiers, automation, solar and optical applications.

     Alex Lidow, CEO and co-founder of EpP Power Conversion, said: "With the clear benefits of these new eGaN FETs, power system designers can achieve superior solutions with gallium nitride devices that offer higher performance, smaller size, higher heat dissipation efficiency and comparable cost. The rate at which gallium nitride devices replace power MOSFETs will continue to accelerate.

     Ippower Conversion is a leading supplier of power management devices based on enhanced Gallium nitride (eGaN) field effect transistors and integrated circuits that perform many times better than the best silicon power MOSFETs. Targeted applications include DC-DC converters, LiDAR, motor drives for electric transport, robotics and drones, and low-cost satellites. In addition, the company continues to expand its eGaN IC-based product range to provide customers with solutions that further save board space, energy and cost.