EPC introduces a 40 V, 1.6 mΩ gallium nitride field-effect transistor

     EPC has introduced a 40 V, 1.6 mΩ gallium nitride field-effect transistor (eGaN FET) with the device model EPC2069 designed for designers, and EPC2069 is smaller, more efficient and more reliable than the available devices on the market today for high-performance, space-constrained applications.EPC is a global leader in enhanced silicon-based gallium nitride power transistors and integrated circuits. The new EPC2069 (typical value 1.6mΩ, 40V) is a low-voltage device with higher performance

     The EPC2069 is ideal for applications requiring high power density, including 48 V to 54 V input servers. Low gate charge and zero reverse recovery loss enable high frequency operation at 1 MHz and higher, high efficiency and high power density in a tiny footprint of 10.6 mm2. The EPC2069 device can support 48V/12V DC/DC solutions ranging from 500 W to 2 kW with over 98% efficiency. The use of gallium nitride (eGaN) devices on the primary and secondary sides can achieve a maximum power density of over 4000 W/in3.

     Alex Lidow, CEO and co-founder of EPC, said: "The EPC2069 device is designed for the secondary side of LLC DC/DC converters that go from 40 V to 60 V to 12 V, and is currently very common in servers with 48 V to 54 V inputs for high density computing applications such as artificial intelligence and gaming. Compared to the previous generation 40 V GaN FETs, this 40 V device is smaller in size, less parasitic inductance and lower cost, allowing designers to achieve higher performance and cost effectiveness."

     The EPC90139 development board has A maximum device voltage of 40 V, a maximum output current of 40 A, and a half-bridge device equipped with an on-board gate driver, using the EPC2069 eGaN FET. This model is 2 "x 2" (50.8mm x 50.8mm). The board is designed for optimal switching performance and contains all key components, making it easy for engineers to evaluate EPC2069.