Diotec Semiconductor MMFTP2319 p-channel enhanced mode field effect transistor

Diotec Semiconductor MMFTP2319 P-channel enhanced mode FET provides fast switching times in SOT-23/TO-236 packages. The MMFTP2319 FET has a maximum drain-source voltage of 40V, a maximum power consumption of 750mW, and a maximum drain current of 4.2A in the junction temperature range from -50°C to +150°C. Diotec Semiconductor MMFTP2319 p-channel enhanced mode FETs are ideal for signal processing, battery management, drives, and logic level converters.

Features

● Fast switching times
● Commercial/industrial-grade
● UL 94V-0 case material
● SOT-23/TO-236 package style
● Moisture Sensitivity Level (MSL) 1
● Led-free, RoHS and REACH compliant

Applications

● Signal processing
● Battery management
● Drivers
● Logic level converters

Specification

● 40V maximum drain-source voltage
● ±20V maximum gate-source voltage
● 750mW maximum power dissipation
● 4.2A maximum drain current
● 30A maximum peak drain current
● 1µA maximum drain source leakage current
● ±100nA maximum gate source leakage current
● 1V to 3V gate-source threshold voltage range
● 80mΩ to 120mΩ maximum drain-source on-state resistance range
● 1179pF typical input capacitance
● 82pF typical output capacitance
● 40pf typical reverse transfer capacitance
● 15ns to 28ns typical turn-on time range
● 4ns to 19ns typical turn-off time range
● 20nC typical total gate charge
● 4nC typical gate-source charge
● 2.6nC typical gate-drain charge
● 4.6Ω typical intrinsic gate resistance
● 1.2V maximum forward voltage
● 13.3ns typical reverse recovery time
● 8.5nC reverse recovery charge
● -55°C to +150°C junction temperature range