Diotec Semiconductor DI020N06D1 N-Channel Power MOSFETs

Diotec Semiconductor DI020N06D1 N-channel power MosFets have low on-off resistance, low gate charge (25.3nC), and fast switching times with avalanche ratings. These components provide 60V drain-source breakdown voltage, 20A continuous drain-source current, and 24 Mω drain-source resistance in the operating temperature range from -55°C to +175°C. The TO-252AA encapsulated DI006H03SQ mosfet is suitable for DC/DC converters, power supplies, DC drivers, synchronous rectifiers and commercial/industrial grade applications.

Features

● Advanced Trench technology
● Low on-state resistance
● Fast switching times
● Low gate charge
● Avalanche rated
● UL 94V-0 case material
● TO-252AA D-PAK package
● Moisture Sensitivity Level (MSL) 1
● AEC-Q101 compliant (-Q suffix)
● Lead-free, RoHS and REACH compliant

Applications

● DC/DC converters
● Power supplies
● DC drives
● Synchronous rectifiers
● Commercial/Industrial-grade

Specification

● 60V drain-source breakdown voltage
● 20A continuous drain current at +25°C
● 24mΩ on drain-source resistance
● ±20V gate-source voltage
● 1.6V gate-source threshold voltage
● 50A (-AQ suffix) or 60A peak drain current
● 25.3nC gate charge
● 25W (-AQ suffix) or 45W power dissipation
● 6ns turn-on delay/rise time
● -55°C to +175°C operating temperature range