Diodes Introduces High Current TOLL MOSFETs for Electric Vehicle Applications

     Diodes Incorporated introduces a space-saving, thermally efficient TOLL (PowerDI 1012-8) package for metal-oxide-semiconductor field-effect transistors (MOSFETs) capable of operating at 175°C in the 100-watt class DMTH10H1M7STLWQ and DMTH10H2M5STLWQ, and an 80-watt class The DMTH8001STLWQ metal oxide semiconductor field effect transistor (MOSFET) occupies 20 percent less PCB area than TO263. The product features an out-of-section formwork that is only 2.4mm thick. This feature makes the product the best choice for high reliability power product applications such as energy heat recovery, integrated starter alternators, and DC-DC converters for electric vehicles.

     The TOLL package is tape-bonded for low package resistance and low parasitic inductance, enabling the DMTH8001STLWQ, DMTH10H1M7STLWQ, and DMTH10H2M5STLWQ to generate typical parasitic on-resistances of 1.3mΩ, 1.4mΩ, and 1.68mΩ with a 10 W gate driver. Additionally, low parasitic inductance improves EMI circuit performance.

     With a 50 percent larger solder area than TO263, the TOLL package enables thermal impedance of the junction to reach 0.65°C/W, and the MOSFET can handle currents up to 270A. Tin-plated trapezoidal groove lead ingots facilitate automated optical inspection (AOI) processes. The Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are all AEC-Q101 qualified, manufactured in an IATF 16949 certified facility and support PPAP files.