
Diodes Corporation introduces a 40V dual MOSFET in a 3.3mm x 3.3mm package that meets automotive specifications. The DMT47M2LDVQ can replace two discrete MOSFETs to reduce board space in many automotive product applications, including power seat control and advanced driver assistance systems (ADAS).
"The number of electronic components in vehicles has increased rapidly over the past decade, fueling the need for continuous innovation," said Ian Moulding, automotive product marketing manager at Diodes Incorporated. "Our response to this demand has expanded the company's reputation as a trusted supplier to the automotive industry."
"Diodes has had six straight years of double-digit growth in this market," Moulding continued. "The DMT47M2LDVQ is an example of how we can help the automotive industry address the technical and commercial challenges it faces in developing the next generation of vehicles."
The DMT47M2LDVQ integrates two n-channel enhancement mode MOSFETs and achieves the industry's lowest RDS(ON) for this configuration - only 10.9mΩ at VGS of 10V and ID of 30.2A. With such low on-resistance, conduction losses can be minimized in product applications such as wireless charging or motor control. Typical gate charge of 14.0nC at VGS of 10V and ID of 20A minimizes switching losses.
The DMT47M2LDVQ's high thermally efficient PowerDI® 3333-8 has a thermal resistance between junction and case (Rthjc) of 8.43°C/W, enabling the development of end-product applications with higher power density than individually packaged MOSFETs. This reduces the PCB area required to implement automotive functions such as ADAS.
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