
CISSOID, a leader in high-temperature semiconductors and power modules, has joined forces with Silicon Mobility, the technology-leading inventor of the Field Programmable Controller Unit (FPCU) semiconductor architecture for ultra-fast and ultra-safe real-time control of new energy vehicles Announced: Silicon Mobility's OLEA® FPCU controller has been integrated with CISSOID's Silicon Carbide (SiC) Intelligent Power Module (IPM) platform, creating a new highly integrated platform that will accelerate the development of electric vehicle motor drives Development of a compact high-efficiency silicon carbide inverter.
The partnership will provide a modular platform for SiC inverters, providing highly integrated hardware and optimized software: power modules and their gate drivers with protection and fault management, ultra-fast FPCU controllers and their Application software optimized for motor control. CISSOID's IPM integrates a three-phase 1200V/340A-550A SiC MOSFET power module with a high temperature gate driver for low switching losses and high power density. Silicon Mobility's OLEA® FPCU controller and OLEA® APP INVERTER software enable fast and efficient motor control.
"In motor drive applications, Silicon Mobility's ultra-fast OLEA FPCU perfectly controls our SiC IPM platform," said Mr. Pierre Delatte, CTO of CISSOID. "Silicon carbide power modules need to be able to switch faster and operate at higher frequencies, so controller technology that can run real-time algorithms faster must be used. In addition, the low power consumption characteristics of OLEA FPCUs are also in the construction of highly compact and efficient A key advantage when pulling inverters”.
"CISSOID's SiC IPM platform is an advanced technology that helps accelerate the development process of SiC power converters," said Mr. David Fresneau, Vice President of Marketing and Business Development at Silicon Mobility. "By combining CISSOID's technology with our OLEA® control solutions, we together provide a unique hardware and software platform that enables the development of highly efficient and extremely safe SiC inverters in just a few months" .
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