Bourns Launches Efficient IGBT Product Portfolio Meeting Industry Needs

     Bourn announced that it will enter the market of insulated gate bipolar transistors (IGBT discrete) with the first highly efficient 600V/650V discrete product line jointly packaged with fast recovery diodes (FRDs). Five new Bourns BID series discrete IGBTs are designed with advanced groove gate field cut-off technology, which not only provide better dynamic characteristic control, but also provide better dynamic characteristic control compared with the previous generation of non through IGBTs BID series discrete IGBT can provide lower collector emitter saturation voltage (VCE (sat)) and lower switching loss. In addition, the structure provides a positive temperature coefficient, which helps to improve the service life of the device and reduce the design requirements for high-voltage and high current product applications，All series are RoHS compliant and halogen-free

     As Bourns' new IGBT is packaged with TO-252, TO-247 and TO-247N with high thermal resistance, these devices can provide lower thermal resistance Rth (j-c), making it an ideal solution for switching mode power supply (SMPS), uninterruptible power supply (UPS), induction heating and power factor correction (PFC) applications. Bourns ®  BID series discrete IGBTs are available in four voltage/current models: 600V/5A, 600V/20A, 600V/30A and 650V/50A, which are tested and certified according to JEDEC power switch product standards.