Ampleon Releases 3rd Generation GaN-on-SiC Transistors with Enhanced Performance

     Avalon Semiconductor announces two new broadband gallium nitride on silicon carbide (GaN-on-SiC) high electron mobility transistors (HEMTs) in the 30W power class CLF3H0060(S)-30 and 100W CLF3H0035(S) )-100. These two high linearity devices are the first products of our recently qualified 3rd generation GaN-SiC HEMT process that went into production.

     These devices provide wideband high linearity at low bias, resulting in improved wideband linearity levels (3rd-order intermodulation below -32dBc at 5dB; lower at 8dB back-off from saturation power at 2:1 bandwidth at -42dBc). Broadband linearity is critical to the frequency-agile radios deployed in defense electronics today, which are used to process multi-mode communication waveforms (from FM signals all the way to higher-order QAM signals) while applying counter-channel conditions. These demanding applications require better broadband linearity in the transistors themselves. Based on market feedback, Avalon's 3rd generation GaN-on-SiC HEMT transistors meet these extended broadband linearity requirements.

     In addition, the two Gen 3 transistors are packaged in thermally enhanced packages for reliable operation and provide extremely robust VSWR tolerance of up to 15:1 for 30W devices. This robustness also extends to Class A amplifier operation. This is common in instrumentation applications with saturated gate conditions while maintaining linearity over a wide dynamic range over an extended frequency range. Avalon's 3rd generation GaN-on-SiC HEMT transistors set a new standard for highly linear GaN technology for broadband applications, while maintaining excellent thermal performance and durability.