Ampleon Introduces B11G3338N80D Push-Pull 3-Stage Fully Integrated Doherty RF Transistor

     Ampleon utilizes advanced LDMOS transistor technology to introduce the B11G3338N80D push-pull 3-stage fully integrated Doherty RF transistor - the carrier product of the GEN11 Macro driver family covering all frequency bands below 6GHz. Covering the 3.3 to 3.8GHz frequency range, this high-efficiency multi-band device enables the next generation of high-power and market-leading efficiency macro base stations.

     Housed in a PQFN 12×7mm² package, this driver product family integrates main and auxiliary devices, input power dividers, output power combiners, and pre-matching for each section. The push-pull configuration of the device eliminates the need for interstage isolators, and the integrated pre- and post-matching enables an input impedance of 50Ω and an output impedance of 25Ω.

     The level of integration of the B11G3338N80D significantly simplifies the design process, reduces BOM cost and ensures reliability and volume consistency. Small footprint pin-to-pin compatible packages targeting sub-6GHz frequency bands minimize layout effort, which is critical for today's space-constrained applications.

     Doherty transistors typically deliver 22% drain efficiency at 12dB power back-off and 34dB power gain under the quoted test conditions. In addition, the design integrates ESD protection and biased gate switches.