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IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single
Records 3,305
Page 102/111
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGS14C40LTRLP
Infineon Technologies

Transistors - IGBTs - Single

IGBT 430V 20A 125W D2PAK

In Stock295

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 430V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Power - Max: 125W
Switching Energy: -
Input Type: Logic
Gate Charge: 27nC
Td (on/off) @ 25°C: 900ns/6µs
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
RJH1BF6RDPQ-80#T2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 1100V 55A 227.2W TO247

In Stock271

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1100V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Power - Max: 227.2W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
RJH1CF4RDPQ-80#T2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 1200V 40A 156.2W TO247

In Stock333

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 156.2W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
RJH1CF5RDPQ-80#T2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 1200V 50A 192.3W TO247

In Stock331

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Power - Max: 192.3W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
RJH1CM5DPQ-E0#T2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 1200V 30A 245W TO247

In Stock344

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Power - Max: 245W
Switching Energy: 1.6mJ (on), 700µJ (off)
Input Type: Standard
Gate Charge: 74nC
Td (on/off) @ 25°C: 40ns/100ns
Test Condition: 600V, 15A, 5Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
RJH1CV7DPQ-E0#T2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 1200V 70A 320W TO247

In Stock111

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A
Power - Max: 320W
Switching Energy: 3.2mJ (on), 2.5mJ (off)
Input Type: Standard
Gate Charge: 166nC
Td (on/off) @ 25°C: 53ns/185ns
Test Condition: 600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
RJP4010AGE-00#P5
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 400V 1.6W TSOJ8

In Stock225

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 9V @ 3V, 150A
Power - Max: 1.6W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOJ (0.094", 2.40mm Width)
Supplier Device Package: 8-TSOJ
APT25GR120BSCD10
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 75A 521W TO247

In Stock304

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Power - Max: 521W
Switching Energy: 434µJ (on), 466µJ (off)
Input Type: Standard
Gate Charge: 203nC
Td (on/off) @ 25°C: 16ns/122ns
Test Condition: 600V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
APT25GR120SSCD10
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 75A 521W D3PAK

In Stock236

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Power - Max: 521W
Switching Energy: 434µJ (on), 466µJ (off)
Input Type: Standard
Gate Charge: 203nC
Td (on/off) @ 25°C: 16ns/122ns
Test Condition: 600V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: D3Pak
APT40GR120B2SCD10
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 88A 500W TO247

In Stock196

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 88A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Power - Max: 500W
Switching Energy: 929µJ (on), 1070µJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 20ns/166ns
Test Condition: 600V, 40A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
STGW30H60DF
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 60A 260W TO247

In Stock123

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Power - Max: 260W
Switching Energy: 350µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: 105nC
Td (on/off) @ 25°C: 50ns/160ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 110ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
APT30GS60KRG
Microsemi

Transistors - IGBTs - Single

IGBT 600V 54A 250W TO220

In Stock438

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 54A
Current - Collector Pulsed (Icm): 113A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Power - Max: 250W
Switching Energy: 570µJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 16ns/360ns
Test Condition: 400V, 30A, 9.1Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
APT50GP60LDLG
Microsemi

Transistors - IGBTs - Single

IGBT 600V 150A 625W TO264

In Stock329

More on Order

Series: -
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 150A
Current - Collector Pulsed (Icm): 190A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Power - Max: 625W
Switching Energy: 456µJ (on), 635µJ (off)
Input Type: Standard
Gate Charge: 165nC
Td (on/off) @ 25°C: 19ns/85ns
Test Condition: 400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
IGW30N100TFKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1000V 60A 412W TO247-3

In Stock387

More on Order

Series: TrenchStop®
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Power - Max: 412W
Switching Energy: 3.8mJ
Input Type: Standard
Gate Charge: 217nC
Td (on/off) @ 25°C: 33ns/535ns
Test Condition: 600V, 30A, 16Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
IRG4BC30S-STRLP
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 34A 100W D2PAK

In Stock171

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 34A
Current - Collector Pulsed (Icm): 68A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Power - Max: 100W
Switching Energy: 260µJ (on), 3.45mJ (off)
Input Type: Standard
Gate Charge: 50nC
Td (on/off) @ 25°C: 22ns/540ns
Test Condition: 480V, 18A, 23Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRG4RC10UTRPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 8.5A 38W DPAK

In Stock439

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8.5A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 38W
Switching Energy: 80µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 19ns/116ns
Test Condition: 480V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
STGWA30N120KD
STMicroelectronics

Transistors - IGBTs - Single

IGBT 1200V 60A 220W TO247

In Stock404

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 20A
Power - Max: 220W
Switching Energy: 2.4mJ (on), 4.3mJ (off)
Input Type: Standard
Gate Charge: 105nC
Td (on/off) @ 25°C: 36ns/251ns
Test Condition: 960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 84ns
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
IRGP4266D-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V 140A 455W TO247AD

In Stock220

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 455W
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRGS4064DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 20A 101W D2PAK

In Stock226

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
Power - Max: 101W
Switching Energy: 29µJ (on), 200µJ (off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 27ns/79ns
Test Condition: 400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr): 62ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
NGTB30N120IHRWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 60A 384W TO247

In Stock206

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: 384W
Switching Energy: 700µJ (off)
Input Type: Standard
Gate Charge: 225nC
Td (on/off) @ 25°C: -/230ns
Test Condition: 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
NGTB30N60FLWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 60A 250W TO247

In Stock381

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Power - Max: 250W
Switching Energy: 700µJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 83ns/170ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 72ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
NGTB30N60FWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 60A 167W TO247

In Stock276

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 167W
Switching Energy: 650µJ (on), 650µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 81ns/190ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 72ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
NGTB40N60FLWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 80A 257W TO247

In Stock493

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 257W
Switching Energy: 890µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 171nC
Td (on/off) @ 25°C: 85ns/174ns
Test Condition: 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): 77ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
NGTB50N60FWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 100A 223W TO247

In Stock299

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Power - Max: 223W
Switching Energy: 1.1mJ (on), 1.2mJ (off)
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 117ns/285ns
Test Condition: 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 77ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
NGTG30N60FLWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 60A 250W TO247

In Stock196

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Power - Max: 250W
Switching Energy: 700µJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 83ns/170ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
NGTG30N60FWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 60A 167W TO247

In Stock261

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 167W
Switching Energy: 650µJ (on), 650µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 81ns/190ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
NGTG50N60FWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 100A 223W TO247

In Stock392

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Power - Max: 223W
Switching Energy: 1.1mJ (on), 1.2mJ (off)
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 117ns/285ns
Test Condition: 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
IRG7PH28UD1MPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 30A 115W TO247AC

In Stock500

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Power - Max: 115W
Switching Energy: 543µJ (off)
Input Type: Standard
Gate Charge: 90nC
Td (on/off) @ 25°C: -/229ns
Test Condition: 600V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRGP4262D-EPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V 60A 250W TO247AC

In Stock276

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 96A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 24A
Power - Max: 250W
Switching Energy: 520µJ (on), 240µJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 24ns/73ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
IRGP4262DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V 60A 250W TO247AC

In Stock467

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 96A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 24A
Power - Max: 250W
Switching Energy: 520µJ (on), 240µJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 24ns/73ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC